elektronische bauelemente SSU07N65SL 7a , 650v , r ds(on) 1.4 n-ch enhancement mode power mosfet 08-oct-2013 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 263 rohs compliant product a suffix of -c specifies halogen free description the SSU07N65SL is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v t c =25c 7 a continuous drain current t c =100c i d 4 a pulsed drain current i dm 28 a t c =25c 140 total power dissipation derate above 25c p d 1.12 w single pulse avalanche energy 1 e as 435 mj operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 0.89 c / w maximum thermal resistance junction-case r jc 62.5 c / w notes: 1. l=30mh,i as =5a, v dd =100v, r g =25 , starting t j =25c 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 4.00 4.85 c 2 1.10 1.65 b 0.51 1.00 b 2 1.34 ref l4 0.00 0.30 d 8.0 9.65 c 0.30 0.74 e 2.54 ref l3 1.50 ref l 14.6 15.88 l1 1.78 2.79 l2 1.27 ref e 9.60 10.67
elektronische bauelemente SSU07N65SL 7a , 650v , r ds(on) 1.4 n-ch enhancement mode power mosfet 08-oct-2013 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 650 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 30v drain-source leakage current i dss - - 1 a v ds =650v, v gs =0 static drain-source on-resistance r ds(on) - 1.1 1.4 v gs =10v, i d =3.5a total gate charge 1.2 q g - 15.5 - gate-source charge 1.2 q gs - 5.4 - gate-drain change 1.2 q gd - 4.5 - nc i d =7a v ds =520v v gs =10v turn-on delay time 1.2 t d(on) - 29 - rise time 1.2 t r - 48 - turn-off delay time 1.2 t d(off) - 39 - fall time 1.2 t f - 33 - ns v dd =325v i d =7a r g =25 input capacitance c iss - 903.3 - output capacitance c oss - 97.7 - reverse transfer capacitance c rss - 3.1 - pf v gs =0 v ds =25v f =1.0mhz source-drain diode diode forward voltage v sd - - 1.4 v i s =7a, v gs =0 continuous source current i s - - 7 a pulsed source current i sm - - 28 a integral reverse p-n junction diode in the mosfet reverse recovery time 1. t rr - 532.77 - ns reverse recovery charge 1. q rr - 3.57 - c i s =7a,v gs =0, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente SSU07N65SL 7a , 650v , r ds(on) 1.4 n-ch enhancement mode power mosfet 08-oct-2013 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSU07N65SL 7a , 650v , r ds(on) 1.4 n-ch enhancement mode power mosfet 08-oct-2013 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSU07N65SL 7a , 650v , r ds(on) 1.4 n-ch enhancement mode power mosfet 08-oct-2013 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical test curves
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